| タイトル | In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD |
| 本文（外部サイト） | http://hdl.handle.net/2060/19900018535 |
| 著者（英） | Singh, R.; Narayan, J.; Chou, P.; Thakur, R. P. S.; Kumar, A.; Sinha, S.; Hsu, N. J. |
| 著者所属（英） | Oklahoma Univ. |
| 発行日 | 1990-04-01 |
| 言語 | eng |
| 内容記述 | In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectric having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writting capability, complex device structures like three-terminal hybrid semiconductors/superconductors transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray defraction, electron microscopy, and energy dispersive x-ray analysis are discussed. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 90N27851 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/136606 |
|
