| タイトル | Extrinsic germanium Blocked Impurity Bank (BIB) detectors |
| 本文（外部サイト） | http://hdl.handle.net/2060/19900012006 |
| 著者（英） | Huffman, James E.; Krabach, Timothy N.; Watson, Dan M. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1989-10-01 |
| 言語 | eng |
| 内容記述 | Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered. |
| NASA分類 | INSTRUMENTATION AND PHOTOGRAPHY |
| レポートNO | 90N21322 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/138267 |
