| タイトル | Near contact phenomena and transient effects in far infrared photoconductors |
| 本文（外部サイト） | http://hdl.handle.net/2060/19900012000 |
| 著者（英） | Haegel, Nancy M. |
| 著者所属（英） | California Univ. |
| 発行日 | 1989-10-01 |
| 言語 | eng |
| 内容記述 | A combination of experimental and modeling work is summarized in two areas: first, the calculation of excess free carrier and space charge distributions near contacts and their effects on device resistivity, and second, the characterization of a slow transient response (tau approx. 1 sec) in Ge:Be detectors which is due to trapping associated with Be(+) formation. In both cases, analytical models, based on continuity and rate equations, have been developed to enable the application of these findings to a wide variety of photoconductor materials. |
| NASA分類 | INSTRUMENTATION AND PHOTOGRAPHY |
| レポートNO | 90N21316 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/138273 |
|
