| タイトル | Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP |
| 本文（外部サイト） | http://hdl.handle.net/2060/19900011077 |
| 著者（英） | Pantic, Dragan M.; Williams, Wallace D.; Dickman, John E.; Kapoor, Vik J.; Young, Paul G. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1990-03-01 |
| 言語 | eng |
| 内容記述 | Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage. |
| NASA分類 | MECHANICAL ENGINEERING |
| レポートNO | 90N20393
NASA-TM-102544
NAS 1.15:102544
E-5356 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/138557 |
