| タイトル | Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates |
| 本文（外部サイト） | http://hdl.handle.net/2060/19890017369 |
| 著者（英） | Bhattacharya, P. K.; Chen, Y. C.; Oh, J. E.; Tsukamoto, S. |
| 著者所属（英） | Michigan Univ. |
| 発行日 | 1989-01-01 |
| 言語 | eng |
| 内容記述 | Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates are discussed. The crystals are all n-type at 300 K and lower temperatures. The surface morphology and electrical characteristics are strongly dependent on Sb(4)/In flux ratio and substrate temperature. The highest mobilities in InSb on InP are 70,000 at 300 K and 110,000 cm(2)/V.s (n=3x10(15) cm(-3)) at 77 K. The mobilities in the alloys also increase monotonically with lowering of temperature. Good quality InAs(x)Sb(1-x) was grown directly on InP substrates by molecular beam epitaxy. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 89N26740
NASA-CR-185439
NAS 1.26:185439 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/141058 |
