| タイトル | Investigation of high efficiency GaAs solar cells |
| 本文（外部サイト） | http://hdl.handle.net/2060/19890015353 |
| 著者（英） | Addis, F. W.; Huber, Dan; Dunham, Glen; Linden, Kurt; Olsen, Larry C. |
| 著者所属（英） | Joint Center for Graduate Study |
| 発行日 | 1989-04-01 |
| 言語 | eng |
| 内容記述 | Investigations of basic mechanisms which limit the performance of high efficiency GaAs solar cells are discussed. P/N heteroface structures have been fabricated from MOCVD epiwafers. Typical AM1 efficiencies are in the 21 to 22 percent range, with a SERI measurement for one cell being 21.5 percent. The cells are nominally 1.5 x 1.5 cm in size. Studies have involved photoresponse, T-I-V analyses, and interpretation of data in terms of appropriate models to determine key cell parameters. Results of these studies are utilized to determine future approaches for increasing GaAs solar cell efficiencies. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 89N24724 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/141712 |
