| タイトル | Characterization of production GaAs solar cells for space |
| 本文（外部サイト） | http://hdl.handle.net/2060/19890011178 |
| 著者（英） | Anspaugh, B. E. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1988-12-15 |
| 言語 | eng |
| 内容記述 | The electrical performance of GaAs solar cells was characterized as a function of irradiation with protons and electrons with the underlying goal of producing solar cells suitable for use in space. Proton energies used varied between 50 keV and 10 MeV, and damage coefficients were derived for liquid phase epitaxy GaAs solar cells. Electron energies varied between 0.7 and 2.4 MeV. Cells from recent production runs were characterized as a function of electron and proton irradiation. These same cells were also characterized as a function of solar intensity and operating temperature, both before and after the electron irradiations. The long term stability of GaAs cells during photon exposure was examined. Some cells were found to degrade with photon exposure and some did not. Calibration standards were made for GaAs/Ge solar cells by flight on a high altitude balloon. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 89N20549
NAS 1.26:184863
JPL-PUBL-88-39
NASA-CR-184863 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/142720 |
