| タイトル | IRAC test report. Gallium doped silicon band 2: Read noise and dark current |
| 本文（外部サイト） | http://hdl.handle.net/2060/19880007561 |
| 著者（英） | Ewin, Audrey; Shu, Peter; Bowser, Jeffrey; Lamb, Gerald; Mather, John |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 1987-01-01 |
| 言語 | eng |
| 内容記述 | A direct readout infrared detector array, a candidate for the Space Infrared Telescope Facility (SIRTF) Infrared Array Camera (IRAC), has been tested. The array has a detector surface of gallium doped silicon, bump bonded to a 58x62 pixel MOSFET multiplexer on a separate chip. Although this chip and system do not meet all the SIRTF requirements, the critically important read noise is within a factor of 3 of the requirement. Significant accomplishments of this study include: (1) development of a low noise correlated double sampling readout system with a readout noise of 127 to 164 electrons (based on the detector integrator capacitance of 0.1 pF); (2) measurement of the readout noise of the detector itself, ranging from 123 to 214 electrons with bias only (best to worst pixel), and 256 to 424 electrons with full clocking in normal operation at 5.4 K where dark current is small. Thirty percent smaller read noises are obtained at a temperature of 15K; (3) measurement of the detector response versus integration time, showing significant nonlinear behavior for large signals, well below the saturation level; and (4) development of a custom computer interface and suitable software for collection, analysis and display of data. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 88N16945
NAS 1.15:87813
REPT-87B0156
NASA-TM-87813 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/147344 |
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