| タイトル | Results of 1 MeV proton irradiation of front and back surfaces of silicon solar cells |
| 本文（外部サイト） | http://hdl.handle.net/2060/19870017002 |
| 著者（英） | Anspaugh, B. E.; Weizer, V. G.; Kachare, R. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1987-06-01 |
| 言語 | eng |
| 内容記述 | Several silicon solar cells with and without back surface fields (BSF), having thicknesses of 200 microns and 63 microns were irradiated with 1 MeV protons having fluences between 1 times 10 to the 10th power and 1 times 10 to the 12th power p/square cm. The irradiation was performed using both normal and isotropic incidence on the front as well as back surfaces of the solar cells. The results of the back surface irradiations are analyzed using a model in which irradiation induced defects across the high-low (BSF) junction are considered. It is concluded that degradation of the high-low junction is responsible for the severe performance loss in thinner cells when irradiated from the rear. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 87N26435 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/149577 |
