| タイトル | Measurement of minority carrier lifetime, mobility and diffusion length in heavily doped silicon |
| 本文（外部サイト） | http://hdl.handle.net/2060/19870006982 |
| 著者（英） | Swanson, R. M.; Swirhun, S. E. |
| 著者所属（英） | Stanford Univ. |
| 発行日 | 1986-01-01 |
| 言語 | eng |
| 内容記述 | Carrier transport and recombination parameters in heavily doped silicon were examined. Data were presented for carrier diffusivity in both p- and n-type heavily doped silicon covering a broad range of doping concentrations from 10 to the 15th power to 10 to the 20th power atoms/cu cm. One of the highlights of the results showed that minority carrier diffusivities are higher by a factor of 2 in silicon compared to majority carrier diffusivities. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 87N16415 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/152326 |
