| タイトル | Characterization of grain boundaries in silicon |
| 本文（外部サイト） | http://hdl.handle.net/2060/19840014392 |
| 著者（英） | Shyu, C. M.; Cheng, L. J.; Crotty, G. T.; Stika, K. M.; Daud, T. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1983-11-15 |
| 言語 | eng |
| 内容記述 | Zero-bias conductance and capacitance measurements at various temperatures were used to study trapped charges and potential barrier height at the boundaries. Deep-level transient spectroscopy (DLTS) was applied to measure the density of states at the boundary. A study of photoconductivity of grain boundaries in p-type silicon demonstrated the applicability of the technique in the measurement of minority carrier recombination velocity at the grain boundary. Enhanced diffusion of phosphorus at grain boundaries in three cast polycrystalline photovoltaic materials was studied. Enhancements for the three were the same, indicating that the properties of boundaries are similar, although grown by different techniques. Grain boundaries capable of enhancing the diffusion were found always to have strong recombination activities; the phenomena could be related to dangling bonds at the boundaries. Evidence that incoherent second-order twins of (111)/(115) type are diffusion-active is presented. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 84N22460
JPL-5101-233
NAS 1.26:173459
NASA-CR-173459
DOE/JPL-1012-90
JPL-PUB-83-87 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/159739 |
