| タイトル | Correlations between plasma variables and the deposition process of Si films from chlorosilanes in low pressure RF plasma of argon and hydrogen |
| 本文（外部サイト） | http://hdl.handle.net/2060/19840013262 |
| 著者（英） | Grill, A.; Carmi, U.; Manory, R.; Grossman, E.; Avni, R. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1984-04-13 |
| 言語 | eng |
| 内容記述 | The dissociation of chlorosilanes to silicon and its deposition on a solid substrate in a RF plasma of mixtures of argon and hydrogen were investigated as a function of the macrovariables of the plasma. The dissociation mechanism of chlorosilanes and HCl as well as the formation of Si in the plasma state were studied by sampling the plasma with a quadrupole mass spectrometer. Macrovariables such as pressure, net RF power input and locations in the plasma reactor strongly influence the kinetics of dissociation. The deposition process of microcrystalline silicon films and its chlorine contamination were correlated to the dissociation mechanism of chlorosilanes and HCl. |
| NASA分類 | PLASMA PHYSICS |
| レポートNO | 84N21330
E-2020
NASA-TM-83603
NAS 1.15:83603 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/159871 |
