| タイトル | Silicon carbide, a high temperature semiconductor |
| 本文（外部サイト） | http://hdl.handle.net/2060/19840006864 |
| 著者（英） | Powell, J. A. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1983-01-01 |
| 言語 | eng |
| 内容記述 | Electronic applications are described that would benefit from the availability of high temperature semiconductor devices. Potential materials for these devices are compared and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 84N14932
E-1861
NAS 1.15:83514
NASA-TM-83514 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/160816 |
