| タイトル | High efficiency, low cost thin GaAs solar cells |
| 本文（外部サイト） | http://hdl.handle.net/2060/19840002594 |
| 著者（英） | Fan, J. C. C. |
| 著者所属（英） | Massachusetts Inst. of Tech. |
| 発行日 | 1982-09-30 |
| 言語 | eng |
| 内容記述 | The feasibility of fabricating space-resistant, high efficiency, light-weight, low-cost GaAs shallow-homojunction solar cells for space application is demonstrated. This program addressed the optimal preparation of ultrathin GaAs single-crystal layers by AsCl3-GaAs-H2 and OMCVD process. Considerable progress has been made in both areas. Detailed studies on the AsCl3 process showed high-quality GaAs thin layers can be routinely grown. Later overgrowth of GaAs by OMCVD has been also observed and thin FaAs films were obtained from this process. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 84N10662
NAS 1.26:168265
NASA-CR-168265 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/161213 |
