| タイトル | Thermal shock resistance of silicon oxynitride |
| 本文（外部サイト） | http://hdl.handle.net/2060/19820012375 |
| 著者（英） | Glandus, J. C.; Boch, P. |
| 著者所属（英） | NASA Headquarters |
| 発行日 | 1981-12-01 |
| 言語 | eng |
| 内容記述 | The thermal shock resistance of Si2N2O refractory material was studied. The thermal expansion coeff. is 3.55x10 to the -6th power at 20 to 800 C and 2.86x10 to the -6th power m/m/deg at 20 to 200 C. The breaking loads are high at high stress. Young's modulus E and the shear modulus G decrease linearly with increasing porosity. For dense material E sub o approx. = 216,500 N/mm2 and G approx = 90,600 N/mm2. The Vickers hardness of the dense material is comparable to that of sapphire. The results on thermal shock show that R, the breaking load, stays constant for T T sub c, the first cracks appear and R decreases sharply for T=T sub c. As the severity of the thermal shock is increased at T T sub c, a small no. of new, large-size cracks appears. The shock's cumulative effect is negligible, and repeated shocks do not change the cracks. The low values of the thermal expansion coefficient and Young's modulus and the high tension breaking load are considered. Sintered Si2N2O with 5% MgO shows excellent cracking resistance under thermal shock. |
| NASA分類 | COMPOSITE MATERIALS |
| レポートNO | 82N20249
NASA-TM-76665
NAS 1.15:76665 |
| 権利 | No Copyright |
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