| タイトル | Ion-beam-enhanced adhesion in the electronic stopping region |
| 本文（外部サイト） | http://hdl.handle.net/2060/19820008940 |
| 著者（英） | Qiu, Y.; Griffith, J. E.; Tombrello, T. A. |
| 著者所属（英） | California Inst. of Tech. |
| 発行日 | 1981-12-01 |
| 言語 | eng |
| 内容記述 | The use of ion beams in the electronic stopping region to improve the adhesion of insulators to other materials is described. In particular, the bonding of Au films to Teflon, ferrite, and SiO2 was improved by bombarding them with He and Cl, respectively. Improvements in bonding were also observed for Au on glass, Au and Cu on sapphire, and Si3N4 on Si. The mechanism is apparently associated with sputtering and track forming processes occurring in the electronic stopping region. Some applications are discussed. |
| NASA分類 | ATOMIC AND MOLECULAR PHYSICS |
| レポートNO | 82N16814
BAP-25
NASA-CR-163467 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/167083 |
