| タイトル | Advanced indium antimonide monolithic charge coupled infrared imaging arrays |
| 本文（外部サイト） | http://hdl.handle.net/2060/19820005483 |
| 著者（英） | Thom, R. D.; Koch, T. L.; Merilainen, C. A. |
| 著者所属（英） | Santa Barbara Research Center |
| 発行日 | 1981-11-01 |
| 言語 | eng |
| 内容記述 | The continued process development of SiO2 insulators for use in advanced InSb monolithic charge coupled infrared imaging arrays is described. Specific investigations into the use of plasma enhanced chemical vapor deposited (PECVD) SiO2 as a gate insulator for InSb charge coupled devices is discussed, as are investigations of other chemical vapor deposited SiO2 materials. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 82N13356
NASA-CR-165799 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/167468 |
