| タイトル | Development of a high efficiency thin silicon solar cell |
| 本文（外部サイト） | http://hdl.handle.net/2060/19810009000 |
| 著者（英） | Storti, G.; Wrigley, C.; Culik, J. |
| 著者所属（英） | Solarex Corp.|Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1980-12-01 |
| 言語 | eng |
| 内容記述 | Significant improvements in open-circuit voltage and conversion efficiency, even on relatively high bulk resistivity silicon, were achieved by using a screen-printed aluminum paste back surface field. A 4 sq cm 50 micron m thick cell was fabricated from textured 10 omega-cm silicon which had an open-circuit voltage of 595 mV and AMO conversion efficiency at 25 C of 14.3%. The best 4 sq cm 50 micron thick cell (2 omega-cm silicon) produced had an open-circuit voltage of 607 mV and an AMO conversion efficiency of 15%. Processing modifications are described which resulted in better front contact integrity and reduced breakage. These modifications were utilized in the thin cell pilot line to fabricate 4 sq cm cells with an average AMO conversion efficiency at 25 C of better than 12.5% and with lot yields as great as 51% of starts; a production rate of 10,000 cells per month was demonstrated. A pilot line was operated which produced large area (25 cm) ultra-thin cells with an average AMO conversion efficiency at 25 deg of better than 11.5% and a lot yield as high as 17%. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 81N17522
SX/115/F
NASA-CR-163931 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/170115 |
