| タイトル | Annealing of radiation damage in 0.1- and 2-ohm-centimeter Silicon solar cells |
| 本文（外部サイト） | http://hdl.handle.net/2060/19790025401 |
| 著者（英） | Weinberg, I.; Swartz, C. K. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1979-10-01 |
| 言語 | eng |
| 内容記述 | Isochronal and isothermal annealing studies were conducted on 0.1 and 2 ohm centimeter n(+)/p silicon cells after irradiation by 1 MeV electrons at fluences of 10 to the 14th power, 5 times 10 to the 14th power, and 10 to the 15th power per square centimeter. For the 0.1 ohm centimeter cells, reverse annealing was not observed in the isochronal data. However, reverse annealing was observed between approximately 200 and 325 C in the isochronal data of the 2 ohm centimeter cells. Isothermal annealing of 0.1 ohm centimeter cells at 500 C restored pre-irradiation maximum power P sub max within 20 minutes at fluence = 10 to the 14th power, in 180 minutes at fluence = 5 times 10 to the 14th power and to 92 percent of pre-irradiation P sub max in 180 minutes for fluence = 10 to the 15th power. Annealing at 450 C was found inadequate to restore 0.1 ohm centimeter cell performance within reasonable times for all fluence levels. By comparison, at 450 C, the P sub max of 2 ohm centimeter cells was restored within 45 minutes, for the two highest fluence levels, while for the lowest fluence, restoration was completed within 15 minutes. Spectral response data indicate that, for both resistivities, degradation occurs predominantly in the cells p-type base region. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 79N33572
NASA-TP-1559
E-9997 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/174408 |
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