| タイトル | A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide |
| 本文（外部サイト） | http://hdl.handle.net/2060/19790014760 |
| 著者（英） | Kuhlman, G. J. |
| 著者所属（英） | Rockwell International Corp. |
| 発行日 | 1979-04-01 |
| 言語 | eng |
| 内容記述 | The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 79N22931
NASA-CR-3120
C77-1046/501 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/175687 |
