| タイトル | Ionized dopant concentrations at the heavily doped surface of a silicon solar cell |
| 本文（外部サイト） | http://hdl.handle.net/2060/19790005715 |
| 著者（英） | Broder, J. D.; Weinberg, I.; Mazaris, G. A., Jr.; Hsu, L. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1978-12-01 |
| 言語 | eng |
| 内容記述 | Data are combined with concentrations obtained by a bulk measurement method using successive layer removal with measurements of Hall effect and resistivity. From the MOS (metal-oxide-semiconductor) measurements it is found that the ionized dopant concentration N has the value (1.4 + or - 0.1) x 10 to the 20th power/cu cm at distances between 100 and 220 nm from the n(+) surface. The bulk measurement technique yields average values of N over layers whose thickness is 2000 nm. Results show that, at the higher concentrations encountered at the n(+) surface, the MOS C-V technique, when combined with a bulk measurement method, can be used to evaluate the effects of materials preparation methodologies on the surface and near surface concentrations of silicon cells. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 79N13886
E-9629
NASA-TP-1347 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/176972 |
