| タイトル | Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices |
| 本文（外部サイト） | http://hdl.handle.net/2060/19760003197 |
| 著者（英） | Chu, T. L. |
| 著者所属（英） | Southern Methodist Univ. |
| 発行日 | 1975-09-01 |
| 言語 | eng |
| 内容記述 | The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions. |
| NASA分類 | INORGANIC AND PHYSICAL CHEMISTRY |
| レポートNO | 76N10285
NASA-CR-145404 |
| 権利 | Copyright, Distribution under U.S. Government purpose rights |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/188304 |
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