| タイトル | Diffusion length measurements using the scanning electron microscope |
| 本文（外部サイト） | http://hdl.handle.net/2060/19750015942 |
| 著者（英） | Weizer, V. G. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1975-01-01 |
| 言語 | eng |
| 内容記述 | A measurement technique employing the scanning electron microscope is described in which values of the true bulk diffusion length are obtained. It is shown that surface recombination effects can be eliminated through the application of highly doped surface field layers. The influence of high injection level effects and low-high junction current generation on the resulting measurement was investigated. Close agreement is found between the diffusion lengths measured by this method and those obtained using a penetrating radiation technique. |
| NASA分類 | QUALITY ASSURANCE AND RELIABILITY |
| レポートNO | 75N24014
NASA-TM-X-71724 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/189983 |
