| タイトル | Ellipsometric measurements of epitaxial GaAs layers on a GaAs substrate |
| 本文（外部サイト） | http://hdl.handle.net/2060/19750007404 |
| 著者（英） | Desmet, D. J. |
| 著者所属（英） | Alabama Univ. |
| 発行日 | 1974-12-17 |
| 言語 | eng |
| 内容記述 | An extensive examination of ellipsometric equations for anisotropic surfaces and films is reported. It is shown that the reflection matrix can be calculated by writing Maxwell's equations in 6 x 6 matrix form and by applying appropriate boundary conditions at proper points in the development of the formalism, reducing the equation for the propagation of light to an eigenvalue problem using a 4 x 4 matrix. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 75N15476
NASA-CR-120574 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/191452 |
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