| タイトル | Thick film silicon growth techniques |
| 本文（外部サイト） | http://hdl.handle.net/2060/19740022097 |
| 著者（英） | Jewett, D. N.; Mlavsky, A. I.; Bates, H. E.; White, V. E. |
| 著者所属（英） | Tyco Labs., Inc.; Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1974-02-28 |
| 言語 | eng |
| 内容記述 | One inch wide silicon ribbons up to 14 inches long have been produced from graphite dies. Several different techniques have been employed to improve the semiconductor purity of silicon. This has resulted in a general increase in quality although the techniques involved have not been optimized. The power factor of uncoated ribbon solar cells produced for material evaluation has increased to approximately 75% of those evaluation cells made from commercial silicon. The present limitation is believed due to low lifetime. Additional work has continued with new die materials; however, only composite dies of SiO2 and C show significant potential at this time. |
| NASA分類 | PHYSICS, SOLID-STATE |
| レポートNO | 74N30210
NASA-CR-139301
QPR-8 |
| 権利 | No Copyright |
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