| タイトル | A study of the electrical properties of p-n junctions formed by ion-implantation into gallium arsenide |
| 本文（外部サイト） | http://hdl.handle.net/2060/19730001990 |
| 著者（英） | Lin, A. H. |
| 著者所属（英） | North Carolina State Univ. |
| 発行日 | 1972-06-01 |
| 言語 | eng |
| 内容記述 | In the process of ion implantation, ion beams bombard the surface and create undesirable surface effects. The surface effects were investigated, and surface leakage currents were shown to be reduced by surface treatment. I-V characteristics and C-V measurements were obtained for the Zn-GaAs and Zn-(In,Ga)As junction is considered as a p-i-n heterojunction, without generation-recombination current. The Zn-GaAs junction is considered as a p-n homojunction with appreciable generation-recombination currents. |
| NASA分類 | PHYSICS, SOLID-STATE |
| レポートNO | 73N10717
NASA-CR-112200
SDL-17 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/201953 |
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