| タイトル | Field Effect Transistor Behavior in Electrospun Polyaniline/Polyethylene Oxide Nanofibers |
| 本文（外部サイト） | http://hdl.handle.net/2060/20050206337 |
| 著者（英） | Mueller, Carl H.; Theofylaktos, Noulie; Miranda, Felix A.; Pinto, Nicholas J. |
| 著者所属（英） | NASA Glenn Research Center |
| 発行日 | 2004-01-01 |
| 言語 | eng |
| 内容記述 | Novel transistors and logic devices based on nanotechnology concepts are under intense development. The potential for ultra-low-power circuitry makes nanotechnology attractive for applications such as digital electronics and sensors. For NASA applications, nanotechnology offers tremendous opportunities for increased onboard data processing, and thus autonomous decision-making ability, and novel sensors that detect and respond to environmental stimuli with little oversight requirements. Polyaniline (PANi) is an intriguing material because its electrical conductivity can be changed from insulating to metallic by varying the doping levels and conformations of the polymer chain, and when combined with polyethylene oxide (PEO), can be formed into nanofibers with diameters ranging from approximately 50 to 500 nm (depending on the deposition conditions). The initial goal of this work was to demonstrate transistor behavior in these nanofibers, thus creating a foundation for future logic devices. |
| NASA分類 | Solid-State Physics |
| 権利 | Copyright, Distribution as joint owner in the copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/219661 |
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