| タイトル | Development of Ultra-High Sensivity Silicon Carbide Detectors |
| 本文（外部サイト） | http://hdl.handle.net/2060/20050180403 |
| 著者（英） | Xin, Xiao-Bin; Stahle, Carl M.; Yan, Feng; Zhao, Jian H.; Alexandrov, Petre; Guan, Bing |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 2005-04-04 |
| 言語 | eng |
| 内容記述 | A variety of silicon carbide (SiC) detectors have been developed to study the sensitivity of SiC ultraviolet (UV) detectors, including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and single photon-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, Sic photo-detectors showed excellent sensitivity. The specific detectivity, D*, of SiC photodiodes are orders of magnitude higher than that of their competitors, such as Si photodiodes, and comparable to the D* of photomultiplier tubes (PMTs). To pursue the ultimate detection sensitivity, SiC APDs and single photon-counting avalanche diodes (SPADs) have also been fabricated. By operating the SiC APDs at a linear mode gain over 10(exp 6), SPADs in UV have been demonstrated. SiC UV detectors have great potential for use in solar blind UV detection and biosensing. Moreover, SiC detectors have excellent radiation hardness and high temperature tolerance which makes them ideal for extreme environment applications such as in space or on the surface of the Moon or Mars. |
| NASA分類 | Instrumentation and Photography |
| 権利 | No Copyright |
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