| タイトル | High Mobility SiGe/Si n-MODFET Structures and Devices on Sapphire Substrates |
| 本文（外部サイト） | http://hdl.handle.net/2060/20040112058 |
| 著者（英） | Alterovitz, Samuel; Mueller, Carl; Ponchak, George; Croke, Edward |
| 著者所属（英） | NASA Glenn Research Center |
| 発行日 | 2004-01-01 |
| 言語 | eng |
| 内容記述 | Si/Ge/Si n-type modulation doped field effect structures and transistors (n-MODFET's) have been fabricated on r-plane sapphire substrates. Mobilities as high as 1380 cm(exp 2)/Vs were measured at room temperature. Excellent carrier confinement was shown by Shubnikov-de Haas measurements. Atomic force microscopy indicated smooth surfaces, with rm's roughness less than 4 nm, similar to the quality of SiGe/Si n-MODFET structures made on Si substrates. Transistors with 2 micron gate lengths and 200 micron gate widths were fabricated and tested. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | Copyright, Distribution as joint owner in the copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/221450 |
