| タイトル | Electrospun Polyaniline/Polyethylene Oxide Nanofiber Field Effect Transistor |
| 本文（外部サイト） | http://hdl.handle.net/2060/20030112247 |
| 著者（英） | Miranda, F. A.; Robinson, D. C.; Johnson, A. T.; Pinto, N. J.; MacDiarmid, A. G.; Theofylaktos, N.; Mueller, C. H. |
| 著者所属（英） | NASA Glenn Research Center |
| 発行日 | 2003-07-03 |
| 言語 | eng |
| 内容記述 | We report on the observation of field effect transistor (FET) behavior in electrospun camphorsulfonic acid doped polyaniline(PANi)/polyethylene oxide(PE0) nanofibers. Saturation channel currents are observed at surprisingly low source/drain voltages. The hole mobility in the depletion regime is 1.4 x 10(exp -4) sq cm/V s while the 1-D charge density (at zero gate bias) is calculated to be approximately 1 hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx. 10(exp -3) S/cm). Reducing or eliminating the PEO content in the fiber is expected to enhance device parameters. Electrospinning is thus proposed as a simple method of fabricating 1-D polymer FET's. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | Copyright, Distribution as joint owner in the copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/222893 |
