| タイトル | Method of Forming Three-Dimensional Semiconductors Structures |
| 本文（外部サイト） | http://hdl.handle.net/2060/20020076390 |
| 著者（英） | Fathauer, Robert W. |
| 著者所属（英） | NASA Pasadena Office |
| 発行日 | 2002-05-14 |
| 言語 | eng |
| 内容記述 | Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow columns of metal silicide embedded in a matrix of single crystal, epitaxially grown silicon. Higher substrate temperatures and lower deposition rates yield larger columns that are farther apart while more silicon produces smaller columns. Column shapes and locations are selected by seeding the substrate with metal silicide starting regions. A variety of 3-dimensional, exemplary electronic devices are disclosed. |
| NASA分類 | Solid-State Physics |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/224337 |
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