| タイトル | Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells |
| 本文（外部サイト） | http://hdl.handle.net/2060/20020051400 |
| 著者（英） | Kolokolov, K.; Kono, J.; Sasa, S.; Larrabee, D. C.; Ning, C. Z.; Tang, J.; Biegel, Bryan A.; Inoue, M.; Li, J.; Khodaparast, G. |
| 著者所属（英） | Computer Sciences Corp.|NASA Ames Research Center |
| 発行日 | 2002-01-01 |
| 言語 | eng |
| 内容記述 | The contents include: 1) Tetrahertz Field: A Technology Gap; 2) Existing THZ Sources and Shortcomings; 3) Applications of A THZ Laser; 4) Previous Optical Pumped LW Generations; 5) Optically Pumped Sb based Intersubband Generation Whys; 6) InGaAs/InP/AlAsSb QWs; 7) Raman Enhanced Optical Gain; 8) Pump Intensity Dependence of THZ Gain; 9) Pump-Probe Interaction Induced Raman Shift; 10) THZ Laser Gain in InGaAs/InP/AlAsSb QWs; 11) Diode-Laser Pumped Difference Frequency Generation (InGaAs/InP/AlAsSb QWs); 12) 6.1 Angstrom Semiconductor Quantum Wells; 13) InAs/GaSb/AlSb Nanostructures; 14) InAs/AlSb Double QWs: DFG Scheme; 15) Sb-Based Triple QWs: Laser Scheme; and 16) Exciton State Pumped THZ Generation. This paper is presented in viewgraph form. |
| NASA分類 | Instrumentation and Photography |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/225053 |
