| タイトル | Analysis of Aluminum-Nitride SOI for High-Temperature Electronics |
| 本文（外部サイト） | http://hdl.handle.net/2060/20010073753 |
| 著者（英） | Yu, Zhiping; Osman, Mohamed A.; Biegel, Bryan A. |
| 著者所属（英） | Computer Sciences Corp. |
| 発行日 | 2000-01-31 |
| 言語 | eng |
| 内容記述 | We use numerical simulation to investigate the high-temperature (up to 500K) operation of SOI MOSFETs with Aluminum-Nitride (AIN) buried insulators, rather than the conventional silicon-dioxide (SiO2). Because the thermal conductivity of AIN is about 100 times that of SiO2, AIN SOI should greatly reduce the often severe self-heating problem of conventional SOI, making SOI potentially suitable for high-temperature applications. A detailed electrothermal transport model is used in the simulations, and solved with a PDE solver called PROPHET In this work, we compare the performance of AIN-based SOI with that of SiO2-based SOI and conventional MOSFETs. We find that AIN SOI does indeed remove the self-heating penalty of SOL However, several device design trade-offs remain, which our simulations highlight. |
| NASA分類 | Metals and Metallic Materials |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/225962 |
|
