| タイトル | Device Physics Analysis of Parasitic Conduction Band Barrier Formation in SiGe HBTs |
| 本文（外部サイト） | http://hdl.handle.net/2060/20000062854 |
| 著者（英） | Alterovitz, S. A.; Roenker, K. P. |
| 著者所属（英） | NASA Glenn Research Center |
| 発行日 | 2000-01-01 |
| 言語 | eng |
| 内容記述 | This paper presents a physics-based model describing the current-induced formation of a parasitic barrier in the conduction band at the base collector heterojunction in npn SiGe heterojunction bipolar transistors (HBTs). Due to the valence band discontinuity DELTA E(sub v), hole injection into the collector at the onset of base pushout is impeded, which gives rise to formation of a barrier to electron transport which degrades the device's high frequency performance. In this paper, we present results from an analytical model for the height of the barrier calculated from the device's structure as a function of the collector junction bias and collector current density. |
| NASA分類 | Solid-State Physics |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/227132 |
