| タイトル | Germanium JFET for Cryogenic Readout Electronics |
| 本文（外部サイト） | http://hdl.handle.net/2060/20000031730 |
| 著者（英） | Monroy, C.; Shu, P.; Das, N. C.; Jhabvala, M. |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 1999-11-23 |
| 言語 | eng |
| 内容記述 | The n-channel Germanium junction field effect transistor (Ge-JFET) was designed and fabricated for cryogenic applications. The Ge-JFET exhibits superior noise performance at liquid nitrogen temperature (77 K). From the device current voltage characteristics of n-channel JFETs, it is seen that transconductance increases monotonically with the lowering of temperature to 4.2 K (liquid helium temperature). |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/227382 |
