| タイトル | Improved Dielectric Properties of Heterostructured Ba2.5Sr0.5TiO3 Thin Film Composites for Microwave Dielectric Devices |
| 著者（英） | Jain, M.; Bhalla, A. S.; Romanofsky, R. R.; Kulkarni, V. N.; VanKeuls, F. W.; Miranda, F. A.; Katiyar, R. S.; Fernandez, F.; Mueller, C. H.; Majumder, S. B.; Agrawal, D. C. |
| 著者所属（英） | NASA Glenn Research Center |
| 発行日 | 2002-11-26 |
| 言語 | eng |
| 内容記述 | In the present work we have deposited MgO and Ba(sub 0.5)Sr(sub 0.5)TiO(sub 3)(BST50) thin layers in different sequences to make MgO:BST50 hetero-structured thin films. These films were characterized by X-ray diffraction and Rutherford backscattering technique and found to be highly (100) textured. The figure of merit {(C(sub0)-C(sub v)/(C(sub0-tandelta)} of the hetero-structured films was found to be higher as compared to pure BST50 films measured at 1 MHz frequency with electric field of 25.3 kV/cm. These films were used to make eight element coupled micro-strip phase shifter and characterized in a frequency range of 13-15 GHz. The high frequency figure of merit (kappa factor, defined as the ratio of degree of phase shift per dB loss) measured at around 14 GHz with electric field of 333 kV/cm has been markedly improved (around 64.28 deg/dB for hetero-structured film as compared to 24.65 deg /dB for pure film). Improvement in dielectric properties in a wide frequency range in the MgO:BST are believed to be due to the higher densification of the hetero-structured films. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | Copyright, Distribution as joint owner in the copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/236552 |
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