| タイトル | Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs |
| 本文（外部サイト） | http://hdl.handle.net/2060/20120008333 |
| 著者（英） | Kim, Hak S.; Goldsman, Neil; Lauenstein, Jean-Marie; Sherman, Phillip; Ladbury, Raymond L.; LaBel, Kenneth A.; Zafrani, Max; Liu, Sandra; Phan, Anthony M.; Titus, Jeffrey L. |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 2012-01-01 |
| 言語 | eng |
| 内容記述 | The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed. |
| NASA分類 | Solid-State Physics |
| レポートNO | GSFC.CP.6574.2012
GSFC.JA.5840.2012 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
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