| タイトル | Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs |
| 本文（外部サイト） | http://hdl.handle.net/2060/20110007877 |
| 著者（英） | Lauenstein, J.-M.; Titus, J.; Zafrani, M.; Ladbury, R. L.; Goldsman, N.; Liu, S.; Phan, A. M.; Kim, H. S.; Sherman, P. |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 2011-01-01 |
| 言語 | eng |
| 内容記述 | The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure is experimentally investigated. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | Copyright, Distribution as joint owner in the copyright |
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