| タイトル | Heavy Ion Microbeam- and Broadbeam-Induced Current Transients in SiGe HBTs |
| 本文（外部サイト） | http://hdl.handle.net/2060/20090033868 |
| 著者（英） | Pellish, Jonathan A.; Schrimpf, R. D.; Diestelhorst, R. M.; Labeal, K. A.; Alles, M. L.; Ferlet-Cavrois, V.; Reed, R. A.; Raman, A.; Dodd, P. E.; McMorrow, D.; Turowski, M.; Phillips, S. D.; Baggio, J.; Duhamel, O.; Moen, K. A.; Cressler, J. D.; Marshall, P. W.; Sutton, A. K.; Vizkelethy, G. |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 2009-07-20 |
| 言語 | eng |
| 内容記述 | IBM 5AM SiGe HBT is device-under-test. High-speed measurement setup. Low-impedance current transient measurements. SNL, JYFL, GANIL. Microbeam to broadbeam position inference. Improvement to state-of-the-art. Microbeam (SNL) transients reveal position dependent heavy ion response, Unique response for different device regions Unique response for different bias schemes. Similarities to TPA pulsed-laser data. Broadbeam transients (JYFL and GANIL) provide realistic heavy ion response. Feedback using microbeam data. Overcome issues of LET and ion range with microbeam. **Angled Ar-40 data in full paper. Data sets yield first-order results, suitable for TCAD calibration feedback. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | Copyright, Distribution as joint owner in the copyright |
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