タイトル | Simulation of SRAM SEU Sensitivity at Reduced Operating Temperatures |
本文(外部サイト) | http://hdl.handle.net/2060/20090027705 |
著者(英) | Sanathanamurthy, S.; Reed, R. A.; Cressler, J. D.; Woods, B.; Turowski, M.; Bellini, M.; Barlow, M.; Sutton, A.; Mantooth, A.; Massengill, L. W.; Moen, K.; Ramachandran, V.; Raman, A.; Alles, M. L. |
著者所属(英) | NASA Goddard Space Flight Center |
発行日 | 2009-03-16 |
言語 | eng |
内容記述 | A new NanoTCAD-to-Spectre interface is applied to perform mixed-mode SEU simulations of an SRAM cell. Results using newly calibrated TCAD cold temperature substrate mobility models, and BSIM3 compact models extracted explicitly for the cold temperature designs, indicate a 33% reduction in SEU threshold for the range of temperatures simulated. |
NASA分類 | Fluid Mechanics and Thermodynamics |
権利 | Copyright, Distribution under U.S. Government purpose rights |
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