| タイトル | High-Speed Single-Event Current Transient Measurements in SiGe HBTs |
| 本文（外部サイト） | http://hdl.handle.net/2060/20090027703 |
| 著者（英） | Baggio, J.; Paillet, P.; Marshall, P.W.; Alles, M.L.; Dodd, P.E.; Pate, N.D.; Schrimpf, R.D.; Diestelhorst, R.M.; Ferlet-Cavrois, V.; McMorrow, D.; Sutton, A.K.; Vizkelethy, G.; Phillips, S.D.; Duhamel, O.; Cressler, J.D.; Reed, R.A.; Pellish, Jonathan A.; LaBel, K.A. |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 2009-06-10 |
| 言語 | eng |
| 内容記述 | Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: 1) Position correlation. 2) Unique response for different bias schemes. 3) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: 1) Feedback using microbeam data 2) Overcome existing issues of LET and ion range with microbeam Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | Copyright, Distribution as joint owner in the copyright |
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