| タイトル | Initial Transient in Zn-doped InSb Grown in Microgravity |
| 本文（外部サイト） | http://hdl.handle.net/2060/20090025938 |
| 著者（英） | Ostrogorsky, A G.; Duffar, T.; Marin, C.; Volz, M. |
| 著者所属（英） | NASA Marshall Space Flight Center |
| 発行日 | 2009-06-01 |
| 言語 | eng |
| 内容記述 | Three Zn-doped InSb crystals were directionally solidified under microgravity conditions at the International Space Station (ISS) Alpha. The distribution of the Zn was measured using SIMS. A short diffusion-controlled transient, typical for systems with k greater than 1 was demonstrated. Static pressure of approximately 4000 N/m2 was imposed on the melt, to prevent bubble formation and dewetting. Still, partial de-wetting has occurred in one experiment, and apparently has disturbed the diffusive transport of Zn in the melt. |
| NASA分類 | Metals and Metallic Materials |
| レポートNO | M09-0371 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
