| タイトル | Dual Band Deep Ultraviolet AlGaN Photodetectors |
| 本文（外部サイト） | http://hdl.handle.net/2060/20080044050 |
| 著者（英） | Aslam, S.; Gaska, R.; Pugel, D.; Stahle, C.; Guan, B.; Franz, D.; Zhang, J. P.; Miko, L. |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 2007-12-12 |
| 言語 | eng |
| 内容記述 | We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | Copyright, Distribution as joint owner in the copyright |
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