| タイトル | 2.4 Micrometer Cutoff Wavelength AlGaAsSb/InGaAsSb Phototransistors |
| 本文（外部サイト） | http://hdl.handle.net/2060/20080015447 |
| 著者（英） | Faleev, N. N.; Prather, D.; Ivanov, S. V.; Abedin, M. N.; Swaminathan, K.; Singh, U. N.; Sulima, O. V.; Semenov, A. N.; Refaat, T. F.; Solov'ev, V. A. |
| 著者所属（英） | Delaware Univ. |
| 発行日 | 2006-01-01 |
| 言語 | eng |
| 内容記述 | We report the first AlGaAsSb/InGaAsSb phototransistors with a cutoff wavelength (50% of peak responsivity) of 2.4 micrometers operating in a broad range of temperatures. These devices are also the first AlGaAsSb/InGaAsSb heterojunction phototransistors (HPT) grown by molecular beam epitaxy (MBE). This work is a continuation of a preceding study, which was carried out using LPE (liquid phase epitaxy)-grown AlGaAsSb/InGaAsSb/GaSb heterostructures. Although the LPE-related work resulted in the fabrication of an HPT with excellent parameters [1-4], the room temperature cutoff wavelength of these devices (approximately 2.15 micrometers) was determined by fundamental limitations implied by the close-to-equilibrium growth from Al-In-Ga-As-Sb melts. As the MBE technique is free from the above limitations, AlGaAsSb/InGaAsSb/GaSb heterostructures for HPT with a narrower bandgap of the InGaAsSb base and collector - and hence sensitivity at longer wavelengths (lambda) - were grown in this work. Moreover, MBE - compared to LPE - provides better control over doping levels, composition and width of the AlGaAsSb and InGaAsSb layers, compositional and doping profiles, especially with regard to abrupt heterojunctions. The new MBE-grown HPT exhibited both high responsivity R (up to 2334 A/W for lambda=2.05 micrometers at -20 deg C.) and specific detectivity D* (up to 2.1 x 10(exp 11) cmHz(exp 1/2)/W for lambda=2.05 micrometers at -20 deg C). |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | Copyright, Distribution as joint owner in the copyright |
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