タイトル | High Power SiGe X-Band (8-10 GHz) Heterojunction Bipolar Transistors and Amplifiers |
本文(外部サイト) | http://hdl.handle.net/2060/20080002281 |
著者(英) | Ponchak, George E.; Alterovitz, Samuel A.; Ma, Zhenqiang; Jiang, Ningyue |
著者所属(英) | NASA Glenn Research Center |
発行日 | 2005-01-01 |
言語 | eng |
内容記述 | Limited by increased parasitics and thermal effects as the device size becomes large, current commercial SiGe power HBTs are difficult to operate at X-band (8-12 GHz) with adequate power added efficiencies at high power levels. We found that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, which thus permits these devices to be efficiently operated at X-band. In this paper, we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8-10 GHz. At 10 GHz, 22.5 dBm (178 mW) RF output power with concurrent gain of 7.32 dB is measured at the peak power-added efficiency of 20.0% and the maximum RF output power of 24.0 dBm (250 mW) is achieved from a 20 emitter finger SiGe power HBT. Demonstration of single-stage X-band medium-power linear MMIC power amplifier is also realized at 8 GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7 dB, a maximum output power of 23.4 dBm and peak power added efficiency of 16% is achieved from the power amplifier. The MMIC exhibits very low distortion with third order intermodulation (IM) suppression C/I of -13 dBc at output power of 21.2 dBm and over 20dBm third order output intercept point (OIP3). |
NASA分類 | Electronics and Electrical Engineering |
権利 | Copyright, Distribution as joint owner in the copyright |
URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/257066 |
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