| タイトル | Texas Instruments-Digital Signal Processor(TI-DSP)SMJ320F20 SEL Testing |
| 本文（外部サイト） | http://hdl.handle.net/2060/20070022328 |
| 著者（英） | Poivey, C.; Sanders, Anthony B.; Kim, H. S.; Gee, George B. |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 2006-09-28 |
| 言語 | eng |
| 内容記述 | This viewgraph presentation reviews the testing of the Texas Instrument Digital Signal Processor(TI-DSP)SMJ320F20. Tests were performed to screen for susceptibility to Single Event Latchup (SEL) and measure sensitivity as a function of Linear Energy Transfer (LET) for an application specific test setup. The Heavy Ion Testing of two TI-DSP SMJ320F240 devices experienced Single Event Latchup (SEL) conditions at an LET of 1.8 MeV/(mg/square cm) The devices were exposed from a fluence of 1.76 x l0(exp 3) to 5.00 x 10(exp 6) particles/square cm of the Neon, Argon and Krypton ion beams. For DI(sub DD) an average latchup current occurred at about 700mA, which is a magnitude of 10 over the nominal current of 700mA. |
| NASA分類 | Space Radiation |
| 権利 | Copyright, Distribution as joint owner in the copyright |
