| タイトル | Experimental Analysis of Proton-Induced Displacement and Ionization Damage Using Gate-Controlled Lateral PNP Bipolar Transistors |
| 本文（外部サイト） | http://hdl.handle.net/2060/20070021292 |
| 著者（英） | Barnaby, H. J.; Schrimpf, R. D.; Ball, D. R. |
| 著者所属（英） | Vanderbilt Univ. |
| 発行日 | 2006-01-01 |
| 言語 | eng |
| 内容記述 | The electrical characteristics of proton-irradiated bipolar transistors are affected by ionization damage to the insulating oxide and displacement damage to the semiconductor bulk. While both types of damage degrade the transistor, it is important to understand the mechanisms individually and to be able to analyze them separately. In this paper, a method for analyzing the effects of ionization and displacement damage using gate-controlled lateral PNP bipolar junction transistors is described. This technique allows the effects of oxide charge, surface recombination velocity, and bulk traps to be measured independently. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | Copyright, Distribution under U.S. Government purpose rights |
