| タイトル | SiGe Based Low Temperature Electronics for Lunar Surface Applications |
| 著者（英） | Cressler, John; Blalock, Benjamin; Kolawa, Elizabeth; Mojarradi, Mohammad M. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 2012-03-15 |
| 言語 | eng |
| 内容記述 | The temperature at the permanently shadowed regions of the moon's surface is approximately -240 C. Other areas of the lunar surface experience temperatures that vary between 120 C and -180 C during the day and night respectively. To protect against the large temperature variations of the moon surface, traditional electronics used in lunar robotics systems are placed inside a thermally controlled housing which is bulky, consumes power and adds complexity to the integration and test. SiGe Based electronics have the capability to operate over wide temperature range like that of the lunar surface. Deploying low temperature SiGe electronics in a lander platform can minimize the need for the central thermal protection system and enable the development of a new generation of landers and mobility platforms with highly efficient distributed architecture. For the past five years a team consisting of NASA, university and industry researchers has been examining the low temperature and wide temperature characteristic of SiGe based transistors for developing electronics for wide temperature needs of NASA environments such as the Moon, Titan, Mars and Europa. This presentation reports on the status of the development of wide temperature SiGe based electronics for the landers and lunar surface mobility systems. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | Copyright |
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