タイトル | RF Properties of Epitaxial Lift-Off HEMT Devices |
著者(英) | Smith, Edwyn D.; Young, Paul G.; Alterovitz, Samuel A.; Mena, Rafael A. |
著者所属(英) | NASA Lewis Research Center |
発行日 | 1993-11-01 |
言語 | eng |
内容記述 | Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted-off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing an enhancement of F(sub max)F(sub T) consistently shows an increase of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration. |
NASA分類 | Solid-State Physics |
レポートNO | 97N71531 IEEE-92-12312 E-7324 NASA-TM-112704 NAS 1.15:112704 |
権利 | Copyright, Distribution as joint owner in the copyright |
URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/268452 |