| タイトル | RF Properties of Epitaxial Lift-Off HEMT Devices |
| 著者（英） | Smith, Edwyn D.; Young, Paul G.; Alterovitz, Samuel A.; Mena, Rafael A. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1993-11-01 |
| 言語 | eng |
| 内容記述 | Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted-off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing an enhancement of F(sub max)F(sub T) consistently shows an increase of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration. |
| NASA分類 | Solid-State Physics |
| レポートNO | 97N71531
IEEE-92-12312
E-7324
NASA-TM-112704
NAS 1.15:112704 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/268452 |
