| タイトル | Application of Oxidation to the Structural Characterization of Sic Epitaxial Films |
| 著者（英） | Petit, J. B.; Powell, J. A.; Jenkins, I. G.; Matus, L. G.; Edgar, J. H. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1991-07-08 |
| 言語 | eng |
| 内容記述 | Both 3C-SiC and 6H-SiC single-crystal films can be grown on vicinal (0001) 6H-SiC wafers. It is found that oxidation can be a powerful diagnostic process for (1) 'color mapping' the 3C and 6H regions of these films, (2) decorating stacking faults in the films, (3) enhancing the decoration of double positioning boundaries, and (4) decorating polishing damage. Contrary to previously published oxidation results, proper oxidation conditions can yield interference colors that provide a definitive map of the polytype distribution for both the Si face and C face of SiC films. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 91A45881
E-6126 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/268577 |
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